What are Transistor Pinouts?What are the Two Types of Transistor Pinouts?
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What are Transistor Pinouts?What are the Two Types of Transistor Pinouts?

　　Transistors, the foundational building blocks of modern electronic devices, come in diverse configurations, each with its own unique pinout and operational characteristics. This guide aims to provide a comprehensive overview of a standard transistor pinout and configuration.　　You’ll learn about the different types of transistors, their physical layout, and how to identify the base, collector, and emitter pins. This guide will serve as a valuable resource for understanding and working with transistors.　　What are Transistor Pinouts?A transistor pinout is the arrangement and identification of the pins located on a transistor. There are different forms of transistors, including bipolar junction transistors and field-effect transistors. Each of the independent forms of transistors has its unique pinout configuration.　　When transistors apply in any circuit, it is imperative that the correct pinout is used. You can find the ideal pin configuration through the datasheets provided by the manufacturer. These datasheets also provide the recommended operating conditions for specific transistors and their electrical characteristics.　　What are the Two Types of Transistor Pinouts?Two primary transistor pinout variants include:　　1. Single In-line Package: they are ideal for through-hole components, which makes them perfect for prototyping. It is a common variant for small-signal transistors, such as the ones used in low-power apps. In such a variant, all of the pins lie in one row along a single side of the transistor package.　　2. Dual In-line Package: they are ideal for both through-hole and SMD components. They can be mounted on PCBs and are perfect for a wide range of integrated circuits. In such a variant, the pins are in two parallel rows on either sides of the transistor package.　　How to Identify a Transistor Pinout?　　Identifying a transistor pinout involves the following steps:　　1. Refer to the datasheet: the datasheet offers the most accurate information about a transistor pinout. You can search for the part number of the transistor and check its datasheet online. You can also check the manufacturer’s website for more details.　　2. Check the markings on the transistor: manufacturers often place the part numbers on the transistors. Identify a code or pattern, which has the transistor pinout. Most transistors have markings near a specified pin to indicate the reference point.　　3. Note the transistor type: it can either be a PNP bipolar junction transistor or an NPN. It can also be either a P-channel field-effect transistor or an N-channel field-effect transistor. This information will help you to identify the transistor pinout.　　4. Use a multimeter: set the multimeter to a diode test mode. Note the transistor’s terminals then use the multimeter to measure forward voltage drop between two terminals.　　5. Check continuity: check the continuity between the terminals using the continuity function of the multimeter.　　6. Trial and error: when you can’t find the markings nor the datasheet, then you can opt to use the trial and error method. Start by applying a small voltage to one pair of the terminals and check the results. Test different combinations to identify the transistor pinout.　　What is a Transistor Pinout Diagram?A transistor pinout diagram is a graphical demonstration showing the arrangement of terminals and pins on a transistor and their corresponding functions. The diagrams are important since they help in connecting transistors correctly.　　A manufacturer’s datasheet will typically have a transistor pinout diagram. Here are some of the elements you will find in a transistor pinout diagram:　　Symbolic representation.　　Pins and labels.　　Physical orientation.　　Arrow or dot.　　Additional information about the transistor pinout.　　How Do You Test a Transistor Pinout?　　You can test a transistor pinout using a multimeter through the following steps:　　Testing the Bipolar Junction Transistor　　1. Identify the transistor type.　　2. Locate the base terminal.　　3. Use the diode test mode.　　4. Probe the base terminal.　　5. Locate the emitter and collector.　　6. Perform a verification using the continuity test.　　Testing Field-Effect Transistor　　1. Identify the FET type.　　2. Find the gate terminal.　　3. Utilize the diode test mode.　　4. Probe the gate terminal.　　5. Locate the source and drain.　　6. Perform a verification using the continuity test.　　Do All Transistors Have the Same Pinout?Not every transistor has the same pinout. The pinout depends on the specific type of transistor, the configuration, and the particular model or part number. You can easily find different models even from the same manufacturer with distinct pinouts.　　The primary factors that determine the transistor pinout include the following:　　Transistor type.　　Manufacturer and model.　　Package type.　　Application.　　Integrated circuits.　　Factors to Consider When Specifying the Pins of TransistorsFor proper operation of the electronic circuit, here are the key considerations when specifying the transistor pinout:　　1. Transistor type: is it a bipolar junction transistor or a field-effect transistor?　　2. Pin configuration: check the base, emitter, and collector for a BJT. For an FET, check the source, gate, and drain.　　3. Package type: consider the physical dimensions and pins layout based on the type of package.　　4. Application requirements: every application has its unique requirements.　　5. Datasheet information: for more accurate information of the transistor pinout, check the manufacturer’s datasheet.　　6. Polarity and orientation: consider the orientation and polarity of the transistor. This is particularly important when it is part of a larger circuit.　　7. Matching with circuit layout: take note of how the transistor’s pinout matches the circuit board layout. Make sure that the transistor pinout matches your circuit design and has a clean and efficient layout.　　8. Identification markings: check for markings on the transistor that show the pinout.　　9. Temperature and power ratings: the datasheet will provide information about the temperature and power ratings to ensure the transistor you choose can tackle its allocated applications.　　10. Alternatives and availability: take note of the availability of the selected transistor and analyze alternative models with identical specifications if the main choice is unavailable.　　11. Verification and testing: use a multimeter to analyze the transistor pinout before integration to the circuit. Exercise caution while adhering to the set standard testing procedures.　　Final ThoughtsIn conclusion, understanding the transistor pinout and configuration is a vital aspect of electronic circuit design. It allows for effective utilization of these essential components, enhancing the overall performance and reliability of electronic devices.　　When it comes to sourcing quality transistors, IBE stands out with commitment to excellence and innovation. With our wide range of high-performance transistors, IBE is a trusted partner for electronics professionals worldwide. Our products consistently deliver on quality and reliability, making us the go-to choice for those seeking the best in the field.
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Release time：2024-01-16 13:42 reading：1219 Continue reading>>
What is a bipolar <span style='color:red'>transistor</span>? What are the types of bipolar <span style='color:red'>transistor</span>s?
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What is a bipolar transistor? What are the types of bipolar transistors?

　　What is a bipolar transistor?　　A semiconductor tool, known as a bipolar transistor, finds application within electronic circuits to enhance and shift signals. This device derives its name from the participation of both electron and hole carriers during its operation.　　NPN (negative-positive-negative) and PNP (positive-negative-positive) represent the two primary categories of these transistors, which are constructed with three layers of semiconductor materials: emitter, base, and collector. By regulating a minor current between the base and emitter connections, these transistors permit a larger current to pass from the collector to the emitter. This attribute renders bipolar transistors valuable for signal enhancement and digital switching tasks.　　What are the types of bipolar transistors?　　The primary sorts of bipolar transistors encompass NPN, designated as Negative-Positive-Negative, and PNP, denoted as Positive-Negative-Positive. These variants exhibit dissimilarities in their semiconductor layers’ organization and the direction in which electrical current moves. Below is a concise illustration of each kind:　　NPN Transistor　　In the NPN transistor, the middle layer, termed the base, consists of P-type semiconductor material, situated between two layers of N-type semiconductor (the emitter and collector). In the NPN transistor, the flow of electric current travels from the collector, the N-type region, to the emitter, another N-type segment, with the base, characterized as P-type, maintaining authority over this flow. When a minute current proceeds from the base towards the emitter, it facilitates a larger current’s passage from the collector to the emitter. This trait serves purposes such as signal amplification and switching.　　PNP Transistor　　In the PNP transistor, the middle layer, identified as the base, includes N-type semiconductor material, interposed between two P-type semiconductor layers, the emitter, and collector. In the PNP transistor, the flow of electrical current advances from the emitter, classified as P-type, towards the collector, also P-type, with the base, designated as N-type, managing this course. A meager current traveling from the base to the emitter permits a more substantial current to flow from the emitter to the collector, also utilized for functions such as amplification and switching.　　NPN and PNP transistors share akin operating principles but contrast in the polarity of voltage and current manipulation. These devices discover widespread use across a range of electronic applications, with the selection between them contingent upon specific circuit prerequisites and the intended outcome of signal amplification or switching features.　　What are the advantages and disadvantages of bipolar transistors?　　Benefits:　　• Amplification offers substantial current enhancement.　　• Swift switching capabilities.　　• Ideal for high-frequency uses.　　• Straightforward to employ.　　Drawbacks:　　• Consumes more power.　　• Generates increased heat.　　• Reacting to temperature shifts with sensitivity.　　• Comes with a voltage handling capacity that’s not as extensive as certain alternative transistor kinds.　　Why use bipolar transistors?　　Bipolar transistors serve multiple purposes within electronic circuits:　　1.Amplification: They find primary utility in signal amplification. They possess the capability to take a diminutive input current or voltage and manage a significantly greater output current. This characteristic proves vital in scenarios necessitating signal enhancement, such as audio amplifiers and signal processing, ensuring the adequate operation of feeble signals.　　2.Rapid Switching: Bipolar transistors display quick on-off switching capabilities, rendering them apt for high-frequency applications. This quality bestows value in functions like oscillators and radio-frequency (RF) circuits.　　3.Dependability: Bipolar transistors earn recognition for their robust and foreseeable performance. They exhibit well-defined attributes and tend to function consistently across a wide spectrum of operational circumstances.　　4.Ease of Utilization: Bipolar transistors stand as fairly uncomplicated to employ, often demanding minimal external components for operation in various applications. This simplicity proves advantageous during circuit design.　　5.Operation at Lower Voltages: Their aptitude to function at diminished voltage levels suits them for battery-operated devices and applications with low voltage requirements.　　6.Reduced Noise: Bipolar transistors typically manifest low noise traits, a valuable quality in scenarios where signal integrity holds significance, such as in audio amplifiers.　　Where are bipolar transistors used?　　Bipolar transistors have diverse applications in the realm of electronic devices and circuits. One of their chief functions lies in amplification, serving in audio amplifiers to elevate feeble audio signals, ensuring their effectiveness in propelling speakers.　　Furthermore, they fulfill an indispensable role in circuits dedicated to signal processing, tasked with amplifying modest input signals for subsequent analysis or manipulation. Within radio receivers, bipolar transistors are commonplace, aiding in the tuning and amplification of radio frequency signals.　　Additionally, they see deployment in digital logic gates, enabling signal switching in realms such as memory and microprocessors. Their rapid switching capabilities render them valuable components in high-frequency oscillators and signal generators.　　Furthermore, bipolar transistors contribute to diverse industrial and scientific equipment, encompassing oscilloscopes, communication devices, and radar systems, where their steadfast performance and swift response hold paramount significance.　　What is the difference between bipolar and MOSFET transistors?　　Bipolar transistors and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent two distinct transistor types, characterized by significant operational disparities. A primary divergence emerges in their control mechanisms. Bipolar transistors function as current-controlled devices, hinging on the current flow between the base and emitter terminals to govern a greater current between the collector and emitter. Conversely, MOSFETs operate as voltage-controlled devices, relying on voltage application at the gate terminal to govern current flow between the source and drain terminals.　　Another vital distinction pertains to the charge carriers they employ. Bipolar transistors engage both electron and hole charge carriers, whereas MOSFETs solely employ electrons. This variation holds consequences for performance, with MOSFETs tending to exhibit heightened input impedance, diminished power consumption, and superior efficiency, particularly in digital scenarios.　　MOSFETs additionally wield advantages in voltage handling capabilities, demonstrating a capacity to manage higher voltages when compared to bipolar transistors. This attribute renders MOSFETs more suited for high-voltage applications like power electronics and voltage regulation.　　What is the working principle of a bipolar transistor?　　The operational principle of a bipolar transistor centers on its capacity to govern the current flow between the collector and emitter terminals by introducing a minor current at the base terminal. Bipolar transistors are categorized into two primary types, namely NPN and PNP. For instance, within an NPN transistor, a meager current is applied to the base-emitter junction, enabling a greater current to travel from the collector to the emitter. This regulated amplification of current constitutes the fundamental functionality of a bipolar transistor. By adjusting the base current, one can regulate the collector current, rendering it beneficial for enhancing signals and processing within electronic circuits.　　Can a bipolar transistor be used as a switch?　　Certainly, a bipolar transistor functions effectively as a switch. In the realm of digital or switching applications, one operates bipolar transistors in two distinctive states: the fully on state, denoted as saturated, or the fully off state, termed as cut-off. Upon applying an adequate base current, the transistor transitions into the on state, facilitating the substantial flow of collector current, thus simulating a closed switch.　　Conversely, when the base current diminishes to zero, the transistor switches to the off state, resembling an open switch. This attribute of bipolar transistors as switches sees extensive application in digital logic circuitry, pulse shaping, and various scenarios where precise control over signal flow proves imperative.
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Release time：2023-11-09 16:00 reading：1472 Continue reading>>
What’s the difference between the <span style='color:red'>transistor</span> and thyristor ?
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What’s the difference between the transistor and thyristor ?

　　Introduction of transistor and thyristorA transistor is a type of triode that consists of an emitter, a base, and a collector. Its main role is to amplify electrical signals and control currents. The transistor works by controlling the collector current by controlling the base current, thereby realizing functions such as current amplification and switching control. Transistors are commonly used in circuits such as amplifiers, switches, oscillators, etc. in electronic circuits. Transistors are mainly divided into bipolar transistors (BJT) and field effect transistors (FET).　　A thyristor is a triac that controls the on/off and direction of current. The working principle of thyristor is to control the main electrode current by controlling the gate current, so as to realize functions such as current control and voltage regulation. Thyristors are commonly used in circuits such as voltage regulation, current control, and DC power conversion in AC circuits.　　Therefore, transistors and thyristors are both semiconductor devices, but their working principles and application scenarios are different, and it is necessary to choose which device to use according to the specific circuit design and requirements.　　Characteristics of transistor and thyristor　　Transistors and thyristors are semiconductor devices with the following characteristics:　　Characteristics of transistorsAmplification function: Transistors can amplify electrical signals, making weak signals larger, thereby realizing signal transmission and processing.　　Switching function: The transistor can be used as a switch to control the on and off of the circuit to achieve control and regulation of the circuit.　　High reliability: The transistor has a long life, high reliability, not easy to be damaged, and has a long service life.　　Small size: The transistor is small in size and light in weight, making it easy to integrate and assemble.　　Characteristics of thyristorStrong controllability: The thyristor can control the main current by controlling the gate current to achieve current control and regulation.　　Bidirectional conduction: The thyristor can conduct current in both directions and can control and regulate forward and reverse currents.　　High reliability: The thyristor has a long life, high reliability, not easy to be damaged, and has a long service life.　　Small size: The thyristor is small in size and light in weight, making it easy to integrate and assemble.Therefore, both transistors and thyristors have the advantages of high reliability and small size, but they are different in functions and application scenarios. The choice of which device to use needs to be based on the specific circuit design and requirements.　　Difference between transistor and thyristor　　Although both transistors and thyristors are semiconductor devices, their working principles and application scenarios are different. The specific differences are as follows:　　The working principles are different　　A transistor is a triode, consisting of an emitter, a base and a collector, and its main function is to amplify electrical signals and control current; while a thyristor is a bidirectional thyristor that can control the on-off and direction of current.　　The application scenarios are different　　Transistors are usually used in amplifiers, switches, oscillators and other circuits in electronic circuits; while thyristors are usually used in voltage regulation, current control, DC power conversion and other circuits in AC circuits.　　The control methods are different　　The control method of the transistor is to control the collector current by controlling the base current; while the control method of the thyristor is to control the main current by controlling the gate current.　　The voltage and current characteristics are different　　The voltage and current characteristics of a transistor are nonlinear, while the voltage and current characteristics of a thyristor are linear.　　Different structures are different　　The structure of a transistor is relatively simple, usually consisting of a PN junction and a control electrode. The control electrode of a transistor can be the base or gate, etc. The voltage of the control electrode can control the current flow of the PN junction, thereby controlling the switching of the circuit. The structure of a thyristor is relatively complex and usually consists of four or more PN junctions and control electrodes. The control electrode of the thyristor can be a gate electrode, a trigger electrode or a control electrode. The voltage of the control electrode can control the on and off of the PN junction, thereby controlling the switching of the circuit.　　ConclusionTherefore, transistors and thyristors are different in terms of working principles, application scenarios, control methods, structure and voltage and current characteristics. It is necessary to choose which device to use based on the specific circuit design and requirements.
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Release time：2023-09-05 14:00 reading：2154 Continue reading>>
Cutting edge <span style='color:red'>transistor</span>s for semiconductors of the future
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Cutting edge transistors for semiconductors of the future

　　As traditional transistors reach the threshold of their miniaturization potential, the ability to incorporate multiple functionalities within a limited number of units becomes crucial for facilitating the creation of compact, energy-efficient circuits. This, in turn, paves the way for enhanced memory capabilities and the realization of more potent computing systems.　　Transistors that can change properties are important elements in the development of tomorrow's semiconductors. With standard transistors approaching the limit for how small they can be, having more functions on the same number of units becomes increasingly important in enabling the development of small, energy-efficient circuits for improved memory and more powerful computers. Researchers at Lund University in Sweden have shown how to create new configurable transistors and exert control on a new, more precise level.　　Transistors that can change properties are important elements in the development of tomorrow's semiconductors. With standard transistors approaching the limit for how small they can be, having more functions on the same number of units becomes increasingly important in enabling the development of small, energy-efficient circuits for improved memory and more powerful computers. Researchers at Lund University in Sweden have shown how to create new configurable transistors and exert control on a new, more precise level.　　In view of the constantly increasing need for better, more powerful and efficient circuits, there is a great interest in reconfigurable transistors. The advantage of these is that, in contrast to standard semiconductors, it is possible to change the transistor's properties after they have been manufactured.　　Historically, computers' computational power and efficiency have been improved by scaling down the silicon transistor's size (also known as Moore's Law). But now a stage has been reached where the costs for continuing development along those lines has become much higher, and quantum mechanics problems have arisen that have slowed development.　　Instead, the search is on for new materials, components and circuits. Lund University is among the world leaders in III-V materials, which are an alternative to silicon. These are materials with considerable potential in the development of high-frequency technology (such as parts for future 6G and 7G networks), optical applications and increasingly energy-efficient electronic components.　　Ferroelectric materials are used in order to realize this potential. These are special materials that can change their inner polarization when exposed to an electric field. It can be compared to an ordinary magnet, but instead of a magnetic north and South Pole, electric poles are formed with a positive and a negative charge on each side of the material. By changing the polarization, it is possible to control the transistor. Another advantage is that the material "remembers" its polarization, even if the current is turned off.　　Through a new combination of materials, the researchers have created ferroelectric "grains" that control a tunnel junction—an electrical bridging effect—in the transistor. This is on an extremely small scale—a grain is 10 nanometers in size. By measuring fluctuations in the voltage or current, it has been possible to identify when polarization changes in the individual grains and thus understand how this affects the transistor's behavior.　　- The Future of the Semiconductor Industry　　In addition to the upstream IC design, the midstream foundry, the DRAM industry, and the downstream packaging and testing, photomask, equipment and other industries, semiconductors have a huge group, and the application of semiconductors has also expanded to the electronic information industry, automotive electronics, Aerospace, medical, precision machinery and other industries.　　While the future of the semiconductor industry looks bright, no one knows with certainty where it’s headed. The direction it moves in depends on many factors, which include the following:　　· the experimentation with new semiconductor materials　　· the increase in the price of rare earth metals　　· the accelerated industrial adoption of new technologies in artificial intelligence (AI), the Internet of Things (IoT), and related fields　　These factors and others will inevitably impact sales, create opportunities, and present fresh challenges.　　At our core, we have a passion to create a better world by making electronics more affordable through semiconductors. This passion is alive today as we continue to pioneer advances in integrated circuits. Each generation of innovation builds upon the last to make technology smaller, more efficient, more reliable and more affordable. Contact us today to learn more about the services provided by Ameya360.
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Release time：2023-07-11 11:46 reading：2913 Continue reading>>
Ameya360:STMicroelectronics SGT120R65AL e-mode PowerGaN Transistor
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Ameya360:STMicroelectronics SGT120R65AL e-mode PowerGaN Transistor

　　STMicroelectronics SGT120R65AL e-mode PowerGaN Transistor offers 650V and 15A while combining well-established packaging technology. The SGT120R65AL G-HEMT device features extremely low conduction losses, high current capability, and ultra-fast switching operation. These features allow the STM SGT120R65AL to achieve high power density and unbeatable efficiency.　　FEATURES　　Enhancement mode normally-off transistor　　Very high switching speed　　High power management capability　　Extremely low capacitances　　Kelvin source pad for optimum gate driving　　Zero reverse recovery charge　　APPLICATIONS　　Adapters for tablets, notebooks, and AIO　　USB Type-C PD adapters and quick chargers　　Wireless chargers　　APPLICATION CIRCUIT
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Release time：2023-02-21 11:39 reading：3362 Continue reading>>
Semiconductor quantum <span style='color:red'>transistor</span> opens the door for photon-based computing
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Semiconductor quantum transistor opens the door for photon-based computing

Researchers from the University of Maryland claim to have demonstrated the first single-photon transistor using a semiconductor chip.Making a quantum transistor triggered by light has been a previous challenge because it requires that the photons interact with each other, the researchers explain.According to the team, the device is compact: roughly one million of these new transistors could fit inside a single grain of salt. It is also fast and able to process 10billion photonic qubits every second."Using our transistor, we should be able to perform quantum gates between photons," says Professor Edo Waks of the University of Maryland's A. James Clark School of Engineering and Joint Quantum Institute. "Software running on a quantum computer would use a series of such operations to attain exponential speedup for certain computational problems.The photonic chip is made from a semiconductor with numerous holes in it. Light entering the chip bounces around and gets trapped by the hole pattern; a quantum dot sits inside the area where the light intensity is strongest.Analogous to conventional computer memory, the dot stores information about photons as they enter the device. The dot can effectively tap into that memory to mediate photon interactions, meaning that the actions of one photon affect others that later arrive at the chip."In a single-photon transistor the quantum dot memory must persist long enough to interact with each photonic qubit," says Shuo Sun, lead author of the new work. "This allows a single photon to switch a bigger stream of photons, which is essential for our device to be considered a transistor."To test that the chip operated like a transistor, the researchers examined how the device responded to weak light pulses that usually contained only one photon. In a normal environment, such dim light might barely register, however, in this device, a single photon gets trapped for a long time, registering its presence in the nearby dot.The team observed that a single photon could, by interacting with the dot, control the transmission of a second light pulse through the device. The first light pulse acts like a key, opening the door for the second photon to enter the chip. If the first pulse didn't contain any photons, the dot blocked subsequent photons from getting through. This behaviour is similar to a conventional transistor where a small voltage controls the passage of current through its terminals. Here, the researchers successfully replaced the voltage with a single photon and demonstrated that their quantum transistor could switch a light pulse containing around 30 photons before the quantum dot's memory ran out.Prof Waks says that his team had to test different aspects of the device's performance prior to getting the transistor to work. "Until now, we had the individual components necessary to make a single photon transistor, but here we combined all of the steps into a single chip.”Sun says that with realistic engineering improvements their approach could allow many quantum light transistors to be linked together. The team hopes that such speedy, highly connected devices will eventually lead to compact quantum computers that process large numbers of photonic qubits.
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Release time：2018-07-10 00:00 reading：1116 Continue reading>>
Nine atom wide graphene nanoribbons could enable nano<span style='color:red'>transistor</span>s
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Nine atom wide graphene nanoribbons could enable nanotransistors

Transistors based on carbon nanostructures could be in production in the near future, according to an international research team, which has succeeded in producing nanotransistors from graphene ribbons. Graphene can become a semiconductor when formed into nanoribbons, meaning it has a sufficiently large band gap such that it can be turned on and off - and thus may become a key component of nanotransistors. How well graphene nanoribbons perform depends on their width and on their edge structure. If the edge is zigzagged, they behave like metals; if ‘armchair shaped’, they become semiconductors. Empa says this will be a major challenge for the production of nanoribbons: if they are cut from a layer of graphene or made by cutting carbon nanotubes, the edges may be irregular and may not exhibit the desired electrical properties. Swiss laboratory Empa, in collaboration with the Max Planck Institute for Polymer Research in Mainz and the University of California at Berkeley, has succeeded in growing ribbons exactly nine atoms wide using precursor molecules. The ribbons also have a regular ‘armchair’ edge. After several process steps, they are combined like puzzle pieces on a gold base to form 1nm wide nanoribbons up to 50nm long with a precisely defined energy gap. Initial tests showed the difference in current flow between the on and off states was too small; something to do with the silicon oxide dielectric layer. In order to have the desired properties, it needed to be 50nm, which influenced electron behaviour. However, by replacing this with a 1.5nm thick layer of hafnium oxide, the on current is said to be orders of magnitudes higher. The team also determined that ribbons should be aligned exactly along the transistor channel, reducing the current high level of non-functioning nanotransistors.
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Release time：2017-11-30 00:00 reading：941 Continue reading>>
Single molecule <span style='color:red'>transistor</span>s work at room temperature
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Single molecule transistors work at room temperature

　　For the first time a team of researchers from Columbia University in the city of New York claims to have reproducibly demonstrated current blockade – the ability to switch a device from the insulating to the conducting state where charge is added and removed one electron at a time – using atomically precise molecular clusters at room temperature.　　According to the research team, this could enable smaller electrical components and improve data storage and computing power.　　To create the transistor, the researchers developed a single cluster of geometrically ordered atoms with an inorganic core made of 14 atoms and positioned linkers that wired the core to two gold electrodes.　　The researchers then used a scanning tunneling microscope technique to make junctions comprising a single cluster connected to the two gold electrodes, which enabled them to characterise its electrical response as they varied the applied bias voltage. The technique is said to allow them to fabricate and measure thousands of junctions with reproducible transport characteristics.　　"We found that these clusters can perform very well as room-temperature nanoscale diodes whose electrical response we can tailor by changing their chemical composition," says Professor Latha Venkataraman.　　"Theoretically, a single atom is the smallest limit, but single-atom devices cannot be fabricated and stabilised at room temperature. With these molecular clusters, we have complete control over their structure with atomic precision and can change the elemental composition and structure in a controllable manner to elicit a certain electrical response."　　"Most of the other studies created single-molecule devices that functioned as single-electron transistors at 4K, but for any real-world application, these devices need to work at room temperature. And ours do," says postdoctoral researcher Giacomo Lovat.　　The team evaluated the performance of the diode through the on/off ratio. At room temperature, they observed an on/off ratio of about 600 in single-cluster junctions, which they claim is higher than any other single-molecule devices measured to date.
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Release time：2017-08-16 00:00 reading：1098 Continue reading>>
Researchers Print Transistors on 2D Thin-Film Materials
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Researchers Print Transistors on 2D Thin-Film Materials

　　While video display manufacturers are furiously trying to devise a practical means to manufacture thin-film transistors (TFTs) with the goal of reducing the cost of monitors, TVs, smartphone screens, and the like, a group of researchers in Ireland have just announced a printing process for creating two-dimensional transistors on thin-film materials that could make displays so cheap that they would be literally disposable.　　A possible application might be packaging for perishables (e.g., a container of yogurt) that displays an expiration-date countdown. Or white wine labels that alert you when the contents are the optimum temperature for drinking. Or imagine if the wrapping for your 7-Eleven breakfast burrito could alert you when your bus or your Lyft is about to arrive.　　The development of the new thin-film transistors was done at Advanced Materials and BioEngineering Research (AMBER), an organization that focuses on materials sciences; it’s funded by Science Foundation Ireland.　　AMBER researchers believe that they’re the first to actually print 2D transistors — they say that they are using a “standard” printing process. They said it was important to show that it was possible to make transistors this way, which is why they did that first, but they seem certain that they’ll be able to use the same process to build solar cells, LEDs, and other devices.　　They described their transistors as vertically stacked, with graphene source, drain, and gate electrodes, a transition metal dichalcogenide channel, and a boron nitride separator. The description comes from the summary of a paper recently published in the journal Science.　　The specific chalcogenide that AMBER said it’s using is tungsten diselenide. It was selected because it has a high charge-carrier mobility.　　The transistors rely on electrolytic gating with ionic liquids, which the AMBER researchers said leads to higher operating currents than achieved with comparable organic TFTs. Electrolytic gating has only recently been proposed for oxide thin films. (Selenium is a chalcogen — chalcogens are also known as the oxygen family).　　The upshot is that the materials that AMBER has chosen for its printed TFT devices carry higher currents than most other TFTs at relatively low drive voltages.　　There are a number of other potential applications for TFT-based displays that may end up as cheap as AMBER promises. AMBER imagines printing interactive smart food and drug labels or using them in next-generation banknote security and e-passports.　　The future is arriving fast.
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Release time：2017-04-21 00:00 reading：1203 Continue reading>>

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AMEYA360 mall (www.ameya360.com) was launched in 2011. Now there are more than 3,500 high-quality suppliers, including 6 million product model data, and more than 1 million component stocks for purchase. Products cover MCU+ memory + power chip +IGBT+MOS tube + op amp + RF Bluetooth + sensor + resistor capacitance inductor + connector and other fields. main business of platform covers spot sales of electronic components, BOM distribution and product supporting materials, providing one-stop purchasing and sales services for our customers.

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